NT-MDT Lithography with UltraSharp conductive cantilevers

Thin bilayered metallic/dielectric film has been exposed by the current passing through the tip of conductive cantilever. It was found the direct formation of resistive nanoareas. Both atomic force (a1) and current mode (a2) images are presented in figures.
Scans size 0.9x0.9 um.

The conditions of the measurument

Date 22-May-1997

Device Solver-P4 (18 bit DAC, scanning area 20um x 20um)

Mode SFM contact mode

Probe Ultrasharp conductive cantilever with curve radius 30nm

The scans courtesy of Dr. G.M. Mikhailov, Institute of Microelectronics Technology Problems, Chernogolovka, Russia.
Non published.